Gallium arsenide

From Free net encyclopedia

This article is about the chemical compound. For the record label, see Gallium Arsenide.

Gallium arsenide is the chemical compound GaAs. It is an important semiconductor and is used to make devices such as microwave frequency integrated circuits (ie, MMICs), infrared light-emitting diodes and laser diodes.

Gallium arsenide
Image:Gallium arsenide.jpg
General
Systematic name Gallium arsenide
Other names  ?
Molecular formula GaAs
Molar mass 144.645 g/mol
Appearance Gray cubic crystals.
CAS number Template:CASREF
Properties
Density and phase 5.3176 g/cm3, solid.
Solubility in water < 0.1 g/100 ml (20°C)
Melting point 1238°C (1511 K)
Boiling point  ?°C (? K)
Electronic Properties
Band gap at 300 K 1.424 eV
Electron effective mass 0.067 me
Light hole effective mass 0.082 me
Heavy hole effective mass 0.45 me
Electron mobility at 300 K 9200 cm2/(V·s)
Hole mobility at 300 K 400 cm2/(V·s)
Structure
Molecular shape Linear
Crystal structure Cubic
Dipole moment  ? D
Hazards
MSDS External MSDS
Main hazards Carcinogenic
NFPA 704 Template:Nfpa
Flash point Non-flammable
R/S statement R: ?
S: ?
RTECS number  ?
Supplementary data page
Structure and
properties 		n, εr, etc.
Thermodynamic
data 		Phase behaviour
Solid, liquid, gas
Spectral data UV, IR, NMR, MS
Related compounds
Other anions  ?
Other cations  ?
Related compounds  ?
Except where noted otherwise, data are given for
materials in their standard state (at 25°C, 100 kPa)
Infobox disclaimer and references


Contents

[edit]

Applications

[edit]

GaAs advantages

GaAs has some electronic properties which are superior to silicon's. It has a higher saturated electron velocity and higher electron mobility, allowing it to function at frequencies in excess of 250 GHz. Also, GaAs devices generate less noise than silicon devices when operated at high frequencies. They can also be operated at higher power levels than the equivalent silicon device because they have higher breakdown voltages. These properties recommend GaAs circuitry in mobile phones, satellite communications, microwave point-to-point links, and some radar systems.

Another advantage of GaAs is that it has a direct bandgap, which means that it can be used to emit light. Silicon has an indirect bandgap and so is very poor at emitting light. (Nonetheless, recent advances may make silicon LEDs and lasers possible).

Because of its high switching speed, GaAs would seem to be ideal for computer applications, and for some time in the 1980's many thought that microelectronics market would switch from silicon to GaAs. The first attempted changes were implemented by the supercomputer vendors Cray, Convex, and Alliant. All three companies implemented GaAs projects in order to stay ahead of the ever-improving CMOS microprocessor. Cray-3, built one GaAs-based machine in the early 1990s, but the effort was so costly that the venture failed, and the company filed for bankruptcy in 1995.

[edit]

Silicon's advantages

Silicon has three major advantages over GaAs. First, silicon is abundant and cheap to process. Silicon's greater physical strength enables larger wafers (maximum of ~300 mm vs. to ~150 mm diameter for GaAs). Of course, Si is tremendously abundant in the Earth's crust. The economy of scale from the silicon industry already in place also prevented the popularization of GaAs.

The second major advantage to Si is the existence of silicon dioxide—one of the best insulators. Silicon dioxide can easily be incorporated onto silicon circuits, and such layers are adherant to the underlying Si. GaAs does not form a stable adherant insulating layer.

The third, and perhaps most important, advantage to silicon is that it possesses a much higher hole mobility. This high mobility allows the fabrication of higher-speed P-channel field effect transistors, which are required for CMOS logic. Because they lack a fast CMOS structure, GaAs logic circuits have much higher power consumption, which has made them unable to compete with silicon logic circuits.

[edit]

GaAs heterostructures

Complex layered structures of gallium arsenide in combination with aluminium arsenide (AlAs) or the alloy AlxGa1-xAs can be grown using molecular beam epitaxy (MBE) or using metalorganic vapour phase epitaxy (MOVPE). Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick.

Another important application of GaAs is for high efficiency solar cells. The combination of GaAs with germanium and indium gallium phosphide is the basis of a triple junction solar cell which holds the record efficiency of over 32% and can operate also with light as concentrated as 2.000 suns. This kind of solar cell powered the robots Spirit and Opportunity, which are exploring Mars surface. Also many solar cars utilize GaAs in solar arrays.

Single crystals of gallium arsenide are manufactured by the Bridgeman technique, as the Czochralski process is difficult for this material.

[edit]

Safety

The toxicological properties of gallium arsenide have not been thoroughly investigated. However, it is considered highly toxic and carcinogenic.

[edit]

See also

[edit]

Related materials

[edit]

External links

Template:Expandde:Galliumarsenid fi:Galliumarsenidi fr:Arséniure de gallium he:גליום ארסניד it:Arseniuro di Gallio ja:ガリウムヒ素 pl:Arsenek galu ru:Арсенид галлия

Retrieved from "http://www.netipedia.com/index.php/Gallium_arsenide"